Lateral crystallization of amorphous silicon by germanium seeding
This paper investigates the time and temperature dependence of amorphous silicon lateral crystallization when polycrystalline germanium is used as a seed. Dramatically different crystallization behaviour is observed for heavy and light crystallization anneals. For a heavy anneal of 40 hours at 550?C...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2006-11.
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| Subjects: | |
| Online Access: | Get fulltext |