Perimeter crystallization of amorphous silicon around a germanium seed
An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500°C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500°C. Transmission electron microscopy shows that the crystallized material is...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2006-07.
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| Subjects: | |
| Online Access: | Get fulltext Get fulltext |