Perimeter crystallization of amorphous silicon around a germanium seed
An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500°C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500°C. Transmission electron microscopy shows that the crystallized material is...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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2006-07.
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| Online Access: | Get fulltext Get fulltext |
| LEADER | 01212 am a22001693u 4500 | ||
|---|---|---|---|
| 001 | 262742 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Hakim, M. M. A |e author |
| 700 | 1 | 0 | |a Matko, I. |e author |
| 700 | 1 | 0 | |a Chenevier, B. |e author |
| 700 | 1 | 0 | |a Ashburn, P. |e author |
| 245 | 0 | 0 | |a Perimeter crystallization of amorphous silicon around a germanium seed |
| 260 | |c 2006-07. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/262742/1/2006HakimPerimeterCrystallization.pdf | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/262742/2/2006HakimPerimeterCrystallization.pdf | ||
| 520 | |a An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500°C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500°C. Transmission electron microscopy shows that the crystallized material is polycrystalline and made up of grains with various orientations. In contrast, a 60 h anneal at 550°C gives increased a-Si crystallization beneath the entire germanium seed, as reported previously. This perimeter crystallization phenomenon is advantageous because it allows a-Si crystallization to be achieved at a lower thermal budget. | ||
| 655 | 7 | |a Article | |