Enhancement of resistivity of Czochralski silicon by deep level manganese doping
Deep level manganese Mn doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 10<sup>14</sup> cm<sup>-2</sup> of Mn at 100 keV followed by rapid...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2006-04.
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| Subjects: | |
| Online Access: | Get fulltext |