Increased lateral crystallization width during nickel induced lateral crystallization of amorphous silicon using fluorine implantation

This paper reports a study of the effect of fluorine implantation on the nickel-induced lateral crystallization of amorphous silicon. To distinguish the effects of the fluorine and the implantation damage, the fluorine implant is either made directly into the a-Si or into the buffer oxide below the...

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Bibliographic Details
Main Authors: Hakim, M.M.A (Author), Ashburn, P. (Author)
Format: Article
Language:English
Published: 2007-08.
Subjects:
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