Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation

This paper reports the observation of stochastic Coulomb blockade for the coupled silicon dots. The device was fabricated from the highly doped dual recess structured silicon channel by means of stress induced pattern-dependent oxidation. Sparsely placed Coulomb oscillation characteristics were obse...

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Bibliographic Details
Main Authors: Manoharan, M. (Author), Tsuchiya, Yoshishige (Author), Oda, S. (Author), Mizuta, Hiroshi (Author)
Format: Article
Language:English
Published: 2008.
Subjects:
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