Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation
This paper reports the observation of stochastic Coulomb blockade for the coupled silicon dots. The device was fabricated from the highly doped dual recess structured silicon channel by means of stress induced pattern-dependent oxidation. Sparsely placed Coulomb oscillation characteristics were obse...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2008.
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| Subjects: | |
| Online Access: | Get fulltext |