Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy

Bibliographic Details
Main Authors: Hiruma, K. (Author), Mori, M. (Author), Yanakura, E. (Author), Mizuta, Hiroshi (Author), Takahashi, S. (Author)
Format: Article
Language:English
Published: 1989.
Subjects:
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