Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
1989.
|
| Subjects: | |
| Online Access: | Get fulltext |
| LEADER | 00522 am a22001573u 4500 | ||
|---|---|---|---|
| 001 | 266248 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Hiruma, K. |e author |
| 700 | 1 | 0 | |a Mori, M. |e author |
| 700 | 1 | 0 | |a Yanakura, E. |e author |
| 700 | 1 | 0 | |a Mizuta, Hiroshi |e author |
| 700 | 1 | 0 | |a Takahashi, S. |e author |
| 245 | 0 | 0 | |a Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy |
| 260 | |c 1989. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/266248/1/paper_8.pdf | ||
| 655 | 7 | |a Article | |