High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2009-03.
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| Subjects: | |
| Online Access: | Get fulltext |