Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
To achieve high performance Ge nMOSFETs it is necessary to reduce the metal/semiconductor Schottky barrier heights at the source and drain. Ni/Ge and NiGe/Ge Schottky barriers are fabricated by electrodeposition using n-type Ge substrates. Current (I)-voltage (V) and capacitance (C)-voltage (V) and...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2009-06.
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| Subjects: | |
| Online Access: | Get fulltext |