Hybrid circuit analysis of a suspended gate silicon nanodot memory (SGSNM) cell
We report a hybrid numerical analysis of the suspended gate silicon nanodot memory (SGSNM) which co-integrates nano-electromechanical systems (NEMS) with silicon MOSFET technology. We propose a new hybrid equivalent circuit model for the SGSNM, in which a parallel-connected variable gate capacitance...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2010-05.
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| Subjects: | |
| Online Access: | Get fulltext |