Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy m...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2011-01.
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| Subjects: | |
| Online Access: | Get fulltext Get fulltext |