Theory of quasiballistic transport through nanocrystalline silicon dots
A model to describe the underlying physics of high-energy electron emission from a porous silicon diode is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. An initial...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2011.
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| Subjects: | |
| Online Access: | Get fulltext |