Improved drive current in RF vertical MOSFETS using hydrogen anneal
This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors witho...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2011-03-04.
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| Subjects: | |
| Online Access: | Get fulltext |