Hybrid Numerical Analysis of a high-speed non-volatile Suspended Gate Silicon Nanodot Memory
We present a hybrid numerical analysis of a high-speed and non-volatile suspended gate silicon nanodot memory (SGSNM) which co-integrates a nano-electromechanical (NEM) control gate with a MOSFET as a readout element and silicon nanodots as a floating gate. A hybrid NEM-MOS circuit simulation is dev...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2011-05.
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| Subjects: | |
| Online Access: | Get fulltext |