Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application
Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO<sub>2</sub>/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction tem...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2012-01.
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| Subjects: | |
| Online Access: | Get fulltext |