Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization
In this work, we demonstrate a low temperature polysilicon nanowire fabrication process using amorphous silicon deposition over an oxide pillar, anisotropic reactive ion etch and metal-induced lateral crystallization (MILC). The fabricated nanowires are rectangular, with a width and height of around...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2012-03.
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| Subjects: | |
| Online Access: | Get fulltext |