Strain effects on avalanche multiplication in a silicon nanodot array

Strain effects on avalanche multiplication in a one-dimensional Si nanodot array have been theoretically studied. Compressive strain has two competing effects of the band-gap narrowing and the level-separation widening. The former reduces the ionization threshold and the latter reduces the impact io...

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Bibliographic Details
Main Authors: Mori, Nobuya (Author), Minari, Hideki (Author), Uno, Shigeyasu (Author), Mizuta, Hiroshi (Author), Koshida, Nobuyoshi (Author)
Format: Article
Language:English
Published: 2012-04-20.
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