Strain effects on avalanche multiplication in a silicon nanodot array
Strain effects on avalanche multiplication in a one-dimensional Si nanodot array have been theoretically studied. Compressive strain has two competing effects of the band-gap narrowing and the level-separation widening. The former reduces the ionization threshold and the latter reduces the impact io...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2012-04-20.
|
| Subjects: | |
| Online Access: | Get fulltext |