Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process
Hydrogen silsesquioxane (HSQ) is a high resolution negative-tone electron beam resist allowing for direct transfer of nanostructures into silicon-on-insulator. Using this resist for electron beam lithography, we fabricate high density lithographically defined Silicon double quantum dot (QD) transist...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2012-08-28.
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| Subjects: | |
| Online Access: | Get fulltext |