Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process
Hydrogen silsesquioxane (HSQ) is a high resolution negative-tone electron beam resist allowing for direct transfer of nanostructures into silicon-on-insulator. Using this resist for electron beam lithography, we fabricate high density lithographically defined Silicon double quantum dot (QD) transist...
Main Authors: | Lin, Y. P. (Author), Husain, M. K. (Author), Alkhalil, F. M. (Author), Lambert, N. (Author), Perez-Barraza, J. (Author), Tsuchiya, Y. (Author), Ferguson, A. J. (Author), Chong, H. M. H. (Author), Mizuta, H. (Author) |
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Format: | Article |
Language: | English |
Published: |
2012-08-28.
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Subjects: | |
Online Access: | Get fulltext |
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