Pulse-induced resistive and capacitive switching in TiO2 thin film devices

In this study we exploit the non-zero crossing current-voltage characteristics exhibited by nanoscale TiO<sub>2</sub> based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate vol...

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Bibliographic Details
Main Authors: Salaoru, I. (Author), Khiat, A. (Author), Li, Q. (Author), Berdan, R. (Author), Prodromakis, T. (Author)
Format: Article
Language:English
Published: 2013-12.
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