Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous silicon

In this work, we investigate the effect of oxide cap layer on the metal-induced lateral crystallization (MILC) of amorphous silicon. The MILC is characterized at temperatures in the range 550 to 428°C using Nomarski optical microscopy and Raman spectroscopy. It is shown that better lateral crystalli...

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Bibliographic Details
Main Authors: Sun, K. (Author), Hakim, M.M.A (Author), Gunn, R. (Author), Ashburn, P. (Author)
Format: Article
Language:English
Published: 2012-12-07.
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