Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO<sub>2</sub> based two terminal cells. Our Pt/TiO<sub>2</sub>/TiO<sub>x</sub>/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their curr...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
2014-10-04.
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Subjects: | |
Online Access: | Get fulltext |