Coexistence of memory-resistance and memory-capacitance in TiO2 solid state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO<sub>2</sub> based two terminal cells. Our Pt/TiO<sub>2</sub>/TiO<sub>x</sub>/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their curr...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2014-10-04.
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| Subjects: | |
| Online Access: | Get fulltext |