Total dose hardness of TiN/HfOx/TiN resistive random access memory
Resistive random access memory based on TiN/HfO<sub>x</sub>/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after <sup>60<...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2014-12.
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| Subjects: | |
| Online Access: | Get fulltext |