An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin
Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of elect...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2016-01-18.
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| Subjects: | |
| Online Access: | Get fulltext |