Electrical phase change of Ga:La:S:Cu films
Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200 µm in the amorphous state and...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2007-07-19.
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| Subjects: | |
| Online Access: | Get fulltext |