Epitaxial growth of high quality ZnS films on sapphire and silicon by pulsed laser deposition
We report for the first time, epitaxial growth of high-quality ZnS films on sapphire and silicon substrates, using pulsed laser deposition. X-ray diffraction results show that at all growth temperatures from 200°C to 680°C, epitaxial wurtzite (002) ZnS films have been successfully grown on (1012) sa...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
1999-08.
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| Subjects: | |
| Online Access: | Get fulltext |