Investigation on the Effect of Direct Current and Integrated Pulsed Electrochemical Etching of n-Type (100) Silicon

Investigation on the Effect of Direct Current and Integrated Pulsed Electrochemical Etching of n-Type (100) Silicon

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This paper investigates the effects of different etching techniques between direct current electrochemical etching (DCPEC) and integrated pulsed electrochemical etching (iPEC) on the structural and optical characteristics of porous silicon formation. The n -type Si (100) was fabricated using both te...

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Bibliographic Details
Main Authors: Bakar, AA (Author), Mahmood, A (Author), Radzali, R (Author), Rahim, AFA (Author), Razali, NSM (Author), Yusuf, Y (Author), Zulkifli, F (Author)
Format: Article
Language:English
Published: 2019
Subjects:
electrochemical etching
GAN
optical characteristics
porous silicon
POROUS SILICON
pulsed electrochemical
surface morphology
TIME
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