First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped alpha-Ga2O3
Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key problem that hinders its potential for realistic power applications. In this paper, pure alpha-Ga2O3 and Ca-doped alpha-...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |