Showing 261 - 280 results of 987 for search '"IEEE Journal of the Electron Devices Society"', query time: 0.99s Refine Results
  1. 261
    Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus
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  2. 262
    High Performance Ga<sub>2</sub>O<sub>3</sub> Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate
    by Dian Lei, Kaizhen Han, Ying Wu, Zhihong Liu, Xiao Gong
    Published 2019-01-01
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  3. 263
    A Low-Power Thin-Film Si Heterojunction FET Noise Amplifier for Generation of True Random Numbers
    by Bahman Hekmatshoar, Ghavam G. Shahidi
    Published 2019-01-01
    “...IEEE Journal of the Electron Devices Society...”
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  4. 264
    Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
    by J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang
    Published 2019-01-01
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  5. 265
    Ferroelectric HfO<sub>2</sub> Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process
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  6. 266
    Understanding the <inline-formula> <tex-math notation="LaTeX">$C-V$ </tex-math></inline-formula> Characteristics of InAsSb-Based nBn Infrared Detectors With N- and P-Type Barrier Layers Through Numerical Modeling
    by Andreu Glasmann, Ilya Prigozhin, Enrico Bellotti
    Published 2019-01-01
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  7. 267
    Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor
    “...IEEE Journal of the Electron Devices Society...”
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  8. 268
    Silicon Photomultipliers With Area Up to 9 mm<sup>2</sup> in a 0.35-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math></inline-formula>m CMOS Process
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  9. 269
    A Reliable Technology for Advanced SiC-MOS Devices Based on Fabrication of High Quality Silicon Oxide Layers by Converting a-Si
    “...IEEE Journal of the Electron Devices Society...”
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  10. 270
    A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
    “...IEEE Journal of the Electron Devices Society...”
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  11. 271
    Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
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  12. 272
    IGZO TFT Gate Driver Circuit With Improved Output Pulse
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  13. 273
    A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study
    “...IEEE Journal of the Electron Devices Society...”
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  14. 274
    A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
    “...IEEE Journal of the Electron Devices Society...”
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  15. 275
    Rigidity Enhancement of GeO<sub>2</sub> by Y-Doping for Reliable Ge Gate Stacks
    “...IEEE Journal of the Electron Devices Society...”
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  16. 276
    Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes
    by Mohammed Shurrab, Amna Siddiqui, Shakti Singh
    Published 2019-01-01
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  17. 277
    Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon
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  18. 278
    High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
    “...IEEE Journal of the Electron Devices Society...”
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  19. 279
    Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
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  20. 280
    Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
    “...IEEE Journal of the Electron Devices Society...”
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