检索结果 - Thomas Kampfe

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  1. 1

    Hydrogenated Amorphous Silicon Microstructuring for 0th-Order Polarization Elements at 1.0&#x2013;1.1 <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula... 由 Thomas Kampfe, Svetlen Tonchev, Guillaume Gomard, Christian Seassal, Olivier Parriaux

    发表在 IEEE Photonics Journal (2011-01-01)
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  2. 2

    A High-Efficiency Charge-Domain Compute-in-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing 由 Nellie Laleni, Franz Muller, Gonzalo Cunarro, Thomas Kampfe, Taekwang Jang

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  3. 3

    Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films 由 Maximilian Lederer, Konrad Seidel, Ricardo Olivo, Thomas Kämpfe, Lukas M. Eng

    发表在 Frontiers in Nanotechnology (2022-08-01)
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  4. 4

    Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films 由 Thomas Kämpfe, Bo Wang, Alexander Haußmann, Long-Qing Chen, Lukas M. Eng

    发表在 Crystals (2020-09-01)
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  5. 5

    Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD 由 Markus Neuber, Maximilian Walter Lederer, Konstantin Mertens, Thomas Kämpfe, Malte Czernohorsky, Konrad Seidel

    发表在 Crystals (2022-08-01)
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  6. 6

    Editorial: Advanced characterization methods for HfO2/ZrO2-based ferroelectrics 由 Patrick D. Lomenzo, Umberto Celano, Umberto Celano, Thomas Kämpfe, Sean R. C. McMitchell

    发表在 Frontiers in Nanotechnology (2023-01-01)
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  7. 7

    Charge-domain content addressable memory based on ferroelectric capacitive memory for reliable and energy-efficient one-shot learning 由 Zuopu Zhou, Hongtao Zhong, Leming Jiao, Zijie Zheng, Huazhong Yang, Thomas Kämpfe, Kai Ni, Xueqing Li, Xiao Gong

    发表在 Nature Communications (2025-08-01)
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  8. 8

    Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems 由 David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer

    发表在 Advanced Electronic Materials (2025-05-01)
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  9. 9

    Surface Plasmon Resonance Based Temperature Sensors in Liquid Environment 由 Joyce Ibrahim, Mostafa Al Masri, Isabelle Verrier, Thomas Kampfe, Colette Veillas, Frédéric Celle, Serge Cioulachtjian, Frédéric Lefèvre, Yves Jourlin

    发表在 Sensors (2019-07-01)
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  10. 10

    First demonstration of in-memory computing crossbar using multi-level Cell FeFET 由 Taha Soliman, Swetaki Chatterjee, Nellie Laleni, Franz Müller, Tobias Kirchner, Norbert Wehn, Thomas Kämpfe, Yogesh Singh Chauhan, Hussam Amrouch

    发表在 Nature Communications (2023-10-01)
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  11. 11

    Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture 由 Ayse Sünbül, David Lehninger, Amir Pourjafar, Shouzhuo Yang, Franz Müller, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Lukas Eng, Maximilian Lederer

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  12. 12

    Embedding security into ferroelectric FET array via in situ memory operation 由 Yixin Xu, Yi Xiao, Zijian Zhao, Franz Müller, Alptekin Vardar, Xiao Gong, Sumitha George, Thomas Kämpfe, Vijaykrishnan Narayanan, Kai Ni

    发表在 Nature Communications (2023-12-01)
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  13. 13

    RF-Characterization of HZO Thin Film Varactors 由 Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Defu Wang, Maximilian Lederer, Ricardo Olivo, Konstantin Mertens, Jennifer Emara, Thomas Kämpfe, Gerald Gerlach

    发表在 Crystals (2021-08-01)
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  14. 14

    Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET 由 Masud Rana Sk, Shubham Pande, Franz Müller, Yannick Raffel, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Thomas Kämpfe, Sourav De, Bhaswar Chakrabarti

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  15. 15

    28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview 由 Yannick Raffel, Franz Müller, Sunanda Thunder, Masud Rana Sk, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Bhaswar Chakrabarti, Thomas Kämpfe, Sourav De

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  16. 16

    Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability 由 David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng

    发表在 Advanced Physics Research (2023-09-01)
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  17. 17

    Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility 由 Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De

    发表在 Advanced Intelligent Systems (2024-04-01)
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  18. 18

    Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing 由 Taixin Li, Xinrui Guo, Franz Müller, Sukhrob Abdulazhanov, Xiaoyang Ma, Hongtao Zhong, Yongpan Liu, Vijaykrishnan Narayanan, Huazhong Yang, Kai Ni, Thomas Kämpfe, Xueqing Li

    发表在 Nature Communications (2025-01-01)
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  19. 19

    Resonant Reflection From Cylindrical Grating-Waveguide Under Holistic Excitation 由 Erieta Katerina Koussi, Hugo Bruhier, M. A. Usuga Higuita, Isabelle Verrier, Colette Veillas, Thomas Kampfe, Stephanie Reynaud, Nicolas Crespo-Monteiro, Olivier Parriaux, Yves Jourlin

    发表在 IEEE Photonics Journal (2020-01-01)
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  20. 20

    Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction 由 Maximilian Lederer, Thomas Kämpfe, Norman Vogel, Dirk Utess, Beate Volkmann, Tarek Ali, Ricardo Olivo, Johannes Müller, Sven Beyer, Martin Trentzsch, Konrad Seidel, Lukas M. Eng

    发表在 Nanomaterials (2020-02-01)
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