Tomas Palacios

Tomás A. Palacios Gutiérrez (born 1978) is a Spanish–American Electrical & Microelectronics Engineer known for his work in advanced device and material design. He holds the chair ''Clarence J. LeBel Professor of Electrical Engineering and Computer Science'' at the Massachusetts Institute of Technology and director of Microsystems Technology Laboratories (MTL). Palacios is known for inventing a super-thin 'sheet' that can charge mobile phones with out electricity. Provided by Wikipedia
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  1. 21
    N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
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  2. 22
    Leakage and breakdown mechanisms of GaN vertical power FinFETs
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  3. 23
    GaN-on-Si technology, a new approach for advanced devices in energy and communications
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  4. 24
    Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application
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  5. 25
    Graphene Frequency Multipliers
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  6. 26
    Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
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  7. 27
    Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications
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  8. 28
    Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
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  9. 29
    Automatic graphene transfer system for improved material quality and efficiency
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  10. 30
    AlGaN/GaN HEMT With 300-GHz fmax
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  11. 31
    Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
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  12. 32
    Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment
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  13. 33
    Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs
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  14. 34
    Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
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  15. 35
    Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs
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  16. 36
    EL ÍNDICE CUANTITATIVO DE CALIDAD WEB COMO INSTRUMENTO OBJETIVO DE MEDICIÓN DE LA CALIDAD DE SITIOS WEB CORPORATIVOS
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  17. 37
    Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
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  18. 38
    A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
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  19. 39
    Use of Terahertz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas
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  20. 40
    Graphene-Based Ambipolar RF Mixers
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