Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

by Zhang, Yuhao, Sun, Min, Jayanta Joglekar, Sameer, Fujishima, Tatsuya, Palacios, Tomas
Published 2018

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

by Uedono, Akira, Fujishima, Tatsuya, Piedra, Daniel, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás
Published 2018