First Demonstration of a Self-Aligned GaN p-FET

by Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Then, Han Wui, Palacios, Tomas
Published 2021

GaN Nanowire Field Emitters with a Self-Aligned Gate Process

by Shih, Pao-Chuan, Rughoobur, Girish, Xiang, Peng, Liu, Kai, Cheng, Kai, Akinwande, Akintunde I., Palacios, Tomas
Published 2022

First Demonstration of a Self-Aligned GaN p-FET

by Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Rajput, Nitul S, Xiang, Peng, Cheng, Kai, Then, Han Wui, Palacios, Tomas
Published 2021

Repeated roll-to-roll transfer of two-dimensional materials by electrochemical delamination

by Hui, F., Kpulun, T., Lanza, M., Harris, G., Hempel, Marek, Lu, A.-Y, Palacios, Tomas, Kong, Jing
Published 2018

Realization of 2D crystalline metal nitrides via selective atomic substitution

by Cao, Jun, Li, Tianshu, Gao, Hongze, Lin, Yuxuan, Wang, Xingzhi, Wang, Haozhe, Palacios, Tomás, Ling, Xi
Published 2021

High-Performance WSe 2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

by Santos, Elton J. G., Yu, Lili, Zubair, Ahmad, Zhang, Xu, Lin, Yuxuan, Zhang, Yuhao, Palacios, Tomas
Published 2017

Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

by Shih, Pao-Chuan, Rughoobur, Girish, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan, Akinwande, Akintunde I., Palacios, Tomas
Published 2022

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

by Uedono, Akira, Fujishima, Tatsuya, Piedra, Daniel, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás
Published 2018

Design space and origin of off-state leakage in GaN vertical power diodes

by Wong, H.-Y, Braga, N. A., Mickevicius, R. V., Jayanta Joglekar, Sameer, Palacios, Tomas, Sun, Min, Zhang, Yuhao, Yu, Lili
Published 2018

Effect of multi-field plates on the reverse breakdown and leakage characteristics of GaN-on-silicon HEMTs

by Boles, T., Carlson, D., Xia, L., Kaleta, A., McLean, C., Jin, D., Palacios, Tomas, Turner, George W., Molnar, Richard J.
Published 2018

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks

by King, M. P., Dickerson, J. R., DasGupta, S., Marinella, M. J., Kaplar, R. J., Piedra, Daniel, Sun, Min, Palacios, Tomas
Published 2017

Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

by Okumura, Hironori, Watanabe, Yasuhiro, Shibata, Tomohiko, Yoshizawa, Kohei, Uedono, Akira, Tokunaga, Hiroki, Koseki, Shuuichi, Arimura, Tadanobu, Suihkonen, Sami, Palacios, Tomás
Published 2022

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

by Zhang, Yuhao, Sun, Min, Perozek, Joshua A., Liu, Zhihong, Zubair, Ahmad, Piedra, Daniel, Chowdhury, Nadim, Gao, Xiang, Shepard, Kenneth, Palacios, Tomas
Published 2019

pH sensing properties of graphene solution-gated field-effect transistors

by Mailly-Giacchetti, Benjamin, Hsu, Allen Long, Wang, Han, Vinciguerra, Vincenzo, Pappalardo, Francesco, Occhipinti, Luigi, Guidetti, Elio, Coffa, Salvatore, Kong, Jing, Palacios, Tomas
Published 2014

Waveguide-integrated mid-infrared photodetection using graphene on a scalable chalcogenide glass platform

by Goldstein, Jordan, Lin, Hongtao, Deckoff-Jones, Skylar, Hempel, Marek, Lu, Ang-Yu, Richardson, Kathleen A, Palacios, Tomás, Kong, Jing, Hu, Juejun, Englund, Dirk
Published 2022

Integrated Circuits Based on Bilayer MoS

by Wang, Han, Yu, Lili, Lee, Yi-Hsien, Shi, Yumeng, Hsu, Allen Long, Chin, Matthew L., Li, Lain-Jong, Dubey, Madan, Kong, Jing, Palacios, Tomas
Published 2014

High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

by Wang, Xiaoxue, Zhang, Xu, Sun, Lei, Lee, Dongwook, Lee, Sunghwan, Wang, Minghui, Zhao, Junjie, Shao-Horn, Yang, Dinca, Mircea, Palacios, Tomas, Gleason, Karen K
Published 2018

Synergistic Roll‐to‐Roll Transfer and Doping of CVD‐Graphene Using Parylene for Ambient‐Stable and Ultra‐Lightweight Photovoltaics

by Tavakoli, Mohammad Mahdi, Azzellino, Giovanni, Hempel, Marek, Lu, Ang‐Yu, Martin‐Martinez, Francisco J., Zhao, Jiayuan, Yeo, Jingjie, Palacios, Tomas, Buehler, Markus J., Kong, Jing
Published 2022

Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

by Nourbakhsh, Amirhasan, Zubair, Ahmad, Tavakkoli Kermani Ghariehali, Amir, Sajjad, Redwan Noor, Ling, Xi, Dresselhaus, Mildred, Kong, Jing, Berggren, Karl K, Antoniadis, Dimitri A, Palacios, Tomas
Published 2017

Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition

by Wang, H., Yu, L., Lee, Y.-H, Fang, W., Hsu, Allen Long, Chin, M., Dubey, Madan, Li, L.-J, Kong, Jing, Herring, Patrick Kenichi, Palacios, Tomas
Published 2014