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Daniel Haasmann
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Daniel Haasmann
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Daniel Haasmann
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1
Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
by
Mayank Chaturvedi
,
Sima Dimitrijev
,
Hamid Amini Moghadam
,
Daniel
Haasmann
,
Peyush Pande
,
Utkarsh Jadli
Published 2021-01-01
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Article
2
Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors
by
Peyush Pande
,
Sima Dimitrijev
,
Daniel
Haasmann
,
Hamid Amini Moghadam
,
Philip Tanner
,
Jisheng Han
Published 2018-01-01
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Article
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