David Esseni

David Esseni from the University of Udine, Udine, Italy was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2013 ''for contributions to characterization and modeling of mobility and quasi-ballistic transport in MOS transistors''. Provided by Wikipedia
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  1. 1
    Foreword Special Issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics
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  2. 2
    Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)
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  3. 3
    Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells
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