Charge Scattering and Mobility in Atomically Thin Semiconductors

by Nan Ma, Debdeep Jena
Published 2014-03-01

75 Years of the Device Research Conference—A History Worth Repeating

by Aaron D. Franklin, Debdeep Jena, Deji Akinwande
Published 2018-01-01

Transistor Switches Using Active Piezoelectric Gate Barriers

by Raj K. Jana, Arvind Ajoy, Gregory Snider, Debdeep Jena
Published 2015-01-01

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

by Jiahao Kang, Wei Liu, Deblina Sarkar, Debdeep Jena, Kaustav Banerjee
Published 2014-07-01

Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

by Mingda Oscar Li, David Esseni, Joseph J. Nahas, Debdeep Jena, Huili Grace Xing
Published 2015-01-01

Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy

by Antonio B. Mei, Yongjian Tang, Jürgen Schubert, Debdeep Jena, Huili (Grace) Xing, Daniel C. Ralph, Darrell G. Schlom
Published 2019-07-01

Modeling and Circuit Design of Associative Memories With Spin–Orbit Torque FETs

by Olalekan Afuye, Xiang Li, Felicia Guo, Debdeep Jena, Daniel C. Ralph, Alyosha Molnar, Huili Grace Xing, Alyssa Apsel
Published 2019-01-01

Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures

by Joseph Casamento, Hyunjea Lee, Celesta S. Chang, Matthew F. Besser, Takuya Maeda, David A. Muller, Huili (Grace) Xing, Debdeep Jena
Published 2021-09-01

γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films

by Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller
Published 2021-05-01

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

by Austin Hickman, Reet Chaudhuri, Lei Li, Kazuki Nomoto, Samuel James Bader, James C. M. Hwang, Huili Grace Xing, Debdeep Jena
Published 2021-01-01

Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates

by Zexuan Zhang, Yongjin Cho, Jashan Singhal, Xiang Li, Phillip Dang, Hyunjea Lee, Joseph Casamento, Yongjian Tang, Huili Grace Xing, Debdeep Jena
Published 2020-01-01

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

by Jimy Encomendero, Faiza Afroz Faria, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Berardi Sensale-Rodriguez, Patrick Fay, Debdeep Jena, Huili Grace Xing
Published 2017-10-01

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

by Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena
Published 2019-01-01

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

by Wenjun Li, Saima Sharmin, Hesameddin Ilatikhameneh, Rajib Rahman, Yeqing Lu, Jingshan Wang, Xiaodong Yan, Alan Seabaugh, Gerhard Klimeck, Debdeep Jena, Patrick Fay
Published 2015-01-01

Room temperature weak ferromagnetism in Sn1−xMnxSe2 2D films grown by molecular beam epitaxy

by Sining Dong, Xinyu Liu, Xiang Li, Vasily Kanzyuba, Taehee Yoo, Sergei Rouvimov, Suresh Vishwanath, Huili G. Xing, Debdeep Jena, Margaret Dobrowolska, Jacek K. Furdyna
Published 2016-03-01

Fully transparent field-effect transistor with high drain current and on-off ratio

by Jisung Park, Hanjong Paik, Kazuki Nomoto, Kiyoung Lee, Bo-Eun Park, Benjamin Grisafe, Li-Chen Wang, Sayeef Salahuddin, Suman Datta, Yongsung Kim, Debdeep Jena, Huili Grace Xing, Darrell G. Schlom
Published 2020-01-01

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

by Wan Sik Hwang, Pei Zhao, Kristof Tahy, Luke O. Nyakiti, Virginia D. Wheeler, Rachael L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Joshua A. Robinson, Wilfried Haensch, Huili (Grace) Xing, Alan Seabaugh, Debdeep Jena
Published 2015-01-01

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

by Hanjong Paik, Zhen Chen, Edward Lochocki, Ariel Seidner H., Amit Verma, Nicholas Tanen, Jisung Park, Masaki Uchida, ShunLi Shang, Bi-Cheng Zhou, Mario Brützam, Reinhard Uecker, Zi-Kui Liu, Debdeep Jena, Kyle M. Shen, David A. Muller, Darrell G. Schlom
Published 2017-11-01

Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]

by Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffmann, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom
Published 2021-04-01

Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

by Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom
Published 2021-03-01