Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

by Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura
Published 2014-10-01