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Toshiyuki Ohno
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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
by
Keiko Masumoto
,
Hirokuni Asamizu
,
Kentaro Tamura
,
Chiaki Kudou
,
Johji Nishio
,
Kazutoshi Kojima
,
Toshiyuki
Ohno
,
Hajime Okumura
Published 2014-10-01
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