Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

by Yoshihiro Irokawa
Published 2011-01-01

First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces

by Yoshihiro Irokawa, Mamoru Usami
Published 2015-06-01

Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique

by Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide
Published 2019-08-01

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

by Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide
Published 2018-12-01

Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer

by Okkyun Seo, Jae Myung Kim, Chulho Song, Yanfang Lou, L. S. R. Kumara, Satoshi Hiroi, Yanna Chen, Yoshio Katsuya, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
Published 2018-07-01