Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics

The interface and bulk trap densities were separately extracted from self-aligned top-gate (SA-TG) coplanar indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using the low-frequency capacitance–voltage (<i>C</i>–<i>V</i>) characteristics and space-charge-limited c...

Full description

Bibliographic Details
Main Authors: Dong-Ho Lee, Dae-Hwan Kim, Hwan-Seok Jeong, Seong-Hyun Hwang, Sunhee Lee, Myeong-Ho Kim, Jun Hyung Lim, Hyuck-In Kwon
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Coatings
Subjects:
IGZO TFT
density of interface trap states
density of bulk trap states
low-frequency <i>C</i>–<i>V</i> characteristics
SCLC
Online Access:https://www.mdpi.com/2079-6412/11/9/1135

Internet

https://www.mdpi.com/2079-6412/11/9/1135

Similar Items