Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (<inline-formula> <mml:math id="mm100" display="block"> <mml:semantics> <mml:mrow> <mml:mn>11</mml:mn> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>2</mml:mn> </mml:mrow> </mml:semantics> </mml:math> </inline-formula>) and Non-Polar (<inline-formula> <mml:math id="mm200" display="block"> <mml:semantics> <mml:mrow> <mml:mn>11</mml:mn> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>0</mml:mn> </mml:mrow> </mml:semantics> </mml:math> </inline-formula>) GaN Nanorods

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (<inline-formula> <mml:math id="mm100" display="block"> <mml:semantics> <mml:mrow> <mml:mn>11</mml:mn> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>2</mml:mn> </mml:mrow> </mml:semantics> </mml:math> </inline-formula>) and Non-Polar (<inline-formula> <mml:math id="mm200" display="block"> <mml:semantics> <mml:mrow> <mml:mn>11</mml:mn> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>0</mml:mn> </mml:mrow> </mml:semantics> </mml:math> </inline-formula>) GaN Nanorods

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have...

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Bibliographic Details
Main Authors: Pierre-Marie Coulon, Peng Feng, Tao Wang, Philip A. Shields
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Nanomaterials
Subjects:
GaN
inductively coupled plasma
dry etching
nanostructures
morphology
light emitting devices
Online Access:https://www.mdpi.com/2079-4991/10/12/2562

Internet

https://www.mdpi.com/2079-4991/10/12/2562

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