Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

The positive bias temperature instability (PBTI) reliability of buried InGaAs channel n-MOSFETs with an InP barrier layer and Al2O3 gate dielectric under medium field (2.7 MV/cm) and high field (5.0 MV/cm) are investigated in this paper. The Al2O3/InP interface of the insertion of an InP barrier lay...

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Bibliographic Details
Main Authors: Haiou Li, Kangchun Qu, Xi Gao, Yue Li, Yonghe Chen, Zhiping Zhou, Lei Ma, Fabi Zhang, Xiaowen Zhang, Tao Fu, Xingpeng Liu, Yingbo Liu, Tangyou Sun, Honggang Liu
Format: Article
Language:English
Published: Frontiers Media S.A. 2020-03-01
Series:Frontiers in Physics
Subjects:
PBTI
Al2O3/InP interface
InGaAs MOSFET
border trap
buried channel
Online Access:https://www.frontiersin.org/article/10.3389/fphy.2020.00051/full

Internet

https://www.frontiersin.org/article/10.3389/fphy.2020.00051/full

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