New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs), the quantum tran...

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Bibliographic Details
Main Authors: Jimy Encomendero, Faiza Afroz Faria, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Berardi Sensale-Rodriguez, Patrick Fay, Debdeep Jena, Huili Grace Xing
Format: Article
Language:English
Published: American Physical Society 2017-10-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.7.041017

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http://doi.org/10.1103/PhysRevX.7.041017

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