Characterization of Defect Traps in SiO2 Thin Films
In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MOS) devices, this work is concerned by the defects generation processes in the non-stoichiometric SiOx, area and at the SiO2 interface. For this purpose, a new measurement technique to study slow-state...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/57872 |