Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-<i>k</i> SiOCH/Mn<sub>2</sub>O<sub>3−x</sub>N/Cu Integration

Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-<i>k</i> SiOCH/Mn<sub>2</sub>O<sub>3−x</sub>N/Cu Integration

In our previous study, a novel barrier processing on a porous low-dielectric constant (low-<i>k</i>) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn&...

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Bibliographic Details
Main Authors: Yi-Lung Cheng, Yu-Lu Lin, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Molecules
Subjects:
porous low-dielectric-constant
barrier
mno<sub>x</sub>
electrical characteristics
reliability
electric-field acceleration factor
tddb
Online Access:https://www.mdpi.com/1420-3049/24/21/3882

Internet

https://www.mdpi.com/1420-3049/24/21/3882

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