| Summary: | In our previous study, a novel barrier processing on a porous low-dielectric constant (low-<i>k</i>) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn<sub>2</sub>O<sub>3−x</sub>N film, additional annealing at 450 °C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn<sub>2</sub>O<sub>3−x</sub>N/p-SiOCH(N)/Si structure were investigated. The proposed Cu/Mn<sub>2</sub>O<sub>3−x</sub>N/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricated stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other metal-insulator-silicon (MIS) capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequence, the proposed Cu/Mn<sub>2</sub>O<sub>3−x</sub>N/p-SiCOH(N) scheme is promising integrity for back-end-of-line interconnects.
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