Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

High power performance InAlGaN/GaN high electron mobility transistor (HEMT) as a candidate for high power and high frequency amplifiers has been demonstrated versus the conventional AlGaN/GaN HEMT by using the same device processes. Comparing with its conventional AlGaN/GaN counterpart, the InAlGaN/...

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Bibliographic Details
Main Authors: Wen Wang, Xinxin Yu, Jianjun Zhou, Dunjun Chen, Kai Zhang, Cen Kong, Yuechan Kong, Zhonghui Li, Tangsheng Chen
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InAlGaN/GaN
HEMT
output power
T-shaped gate
Online Access:https://ieeexplore.ieee.org/document/8293769/

Internet

https://ieeexplore.ieee.org/document/8293769/

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